M13S64164A-5TG M13S64164A-5T 64MB DRAM DDR SDRAM IC
M13S64164A(2C) 64Mb 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz 66TSOPII
M13S64164A-5TG M13S64164A-5T 64MB DRAM DDR SDRAM
Application :
Automotive
Networking
Consumer
Set Top Box
Industrial
Display
IOT
Security Surveillance
Wearable Devices
PC Peripherals
Elite Semiconductor Microelectronics Technology Inc. (ESMT) is a professional IC design company, founded in June 1998 in Taiwan's Hsinchu Science Industrial Park. The company's main business includes own brand IC product design, manufacturing, sales and technical services. ESMT successfully went public on Taiwan Stock Exchange, code 3006, in March 2002.
ESMT SDRAM Products more in stock:
M12L5121632A-6TG2T 166MHz TSOP
M12L5121632A-7TG2T 143MHz TSOP54
M12L5121632A-5BG2T 200MHz BGA
M12L5121632A-6BG2T 166MHz BGA
M12L5121632A-7BG2T 143MHz BGA
| M12L2561616A (2T) | 16Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz |
| M12L16161A (2R) | 512K x 16Bit x 2Banks Synchronous DRAM |
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| M12L16161A-5TG2R | |||||
| M12L16161A-7TG2R | |||||
| M12L64164A(2C) | |||||
| M12L64164A-5TG2C | |||||
| M12L64164A-7TG | |||||
| M12L64322A-2s | |||||
| M12L64322A-5TG2S | |||||
| M12L64322A-6T | |||||
| M12L128168A(2S) | 8Mbx16 | SDRAM 3.3V | 4K | 143/166/200MHz | 54TSOPII/ 54FBGA |
| M12L128324A(2C) | 4Mbx32 | SDRAM 3.3V | 4K | 143/166/200MHz | 90 FBGA |
| M12L2561616A (2T) | 16Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz | 54 pin TSOPII/ 54 Ball FBGA |
| M12L5121632A (2T) | 32Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz | 54 pin TSOPII/ 54 Ball FBGA |
| M12L5121632A-5TG2T 200MHz TSOP II Pb-free | |||||
| M12L5121632A-6TG2T 166MHz TSOP II Pb-free | |||||
| M12L5121632A-7TG2T 143MHz TSOP II Pb-free | |||||
| M12L5121632A-5BG2T 200MHz BGA Pb-free | |||||
| M12L5121632A-6BG2T 166MHz BGA Pb-free | |||||
| M12L5121632A-7BG2T 143MHz BGA Pb-free |
128 Mo DRAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T
M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA
M13S64164A-5TG M13S64164A-5T M13S64164A(2C) Circuit intégré de mémoire DRAM DDR SDRAM ESMT
M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3.3V CI de mémoire
| Image | partie # | Description | |
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128 Mo DRAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T |
M13S128168A (2S) 8Mbx16 2.5V 4K 160/200/250MHz 66TSOPII/ 60BGA DDR SDRAM IC
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M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA |
M12L5121632A 32Mbx16 SDRAM 3.3V 8K 143/166/200MHz 54pin TSOPII/54FBGA IC M12L5121632A-5TG2T
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M13S64164A-5TG M13S64164A-5T M13S64164A(2C) Circuit intégré de mémoire DRAM DDR SDRAM ESMT |
ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz
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M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3.3V CI de mémoire |
M12L2561616A (2T) M12L16161A (2R) M12L16164A M12L64322A M12L128168A M12L5121632ASDRAM
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