M12L5121632A-6TG2T 166MHz TSOP M12L5121632A-7TG2T 143MHz TSOP54 M12L5121632A-5BG2T 200MHz BGA M12L5121632A-6BG2T 166MHz BGA M12L5121632A-7BG2T 143MHz BGA
M12L5121632A 32Mbx16 SDRAM 3.3V 8K 143/166/200MHz 54 broches TSOPII/54FBGA IC M12L5121632A-5TG2T
M12L5121632A-6TG2T 166MHz TSOP
M12L5121632A-7TG2T 143MHz TSOP54
M12L5121632A-5BG2T 200MHz BGA
M12L5121632A-6BG2T 166MHz BGA
M12L5121632A-7BG2T 143MHz BGA
| M12L2561616A (2T) | 16Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz |
Application :
Automobile
Réseaux
Grand public
Set Top Box
Industriel
Affichage
IOT
Surveillance de sécurité
Appareils portables
Périphériques PC
Elite Semiconductor Microelectronics Technology Inc. (ESMT) est une société de conception de circuits intégrés professionnelle, fondée en juin 1998 dans le parc industriel scientifique de Hsinchu à Taïwan. L'activité principale de la société comprend la conception, la fabrication, la vente et les services techniques de produits de circuits intégrés de sa propre marque. ESMT est entrée avec succès en bourse à la Bourse de Taïwan, code 3006, en mars 2002.
Produits SDRAM ESMT plus en stock :
| M12L16161A (2R) | 512K x 16 bits x 2 banques SDRAM synchrone |
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| M12L16161A-5TG2R | |||||
| M12L16161A-7TG2R | |||||
| M12L64164A(2C) | |||||
| M12L64164A-5TG2C | |||||
| M12L64164A-7TG | |||||
| M12L64322A-2s | |||||
| M12L64322A-5TG2S | |||||
| M12L64322A-6T | |||||
| M12L128168A(2S) | 8Mbx16 | SDRAM 3.3V | 4K | 143/166/200MHz | 54TSOPII/ 54FBGA |
| M12L128324A(2C) | 4Mbx32 | SDRAM 3.3V | 4K | 143/166/200MHz | 90 FBGA |
| M12L2561616A (2T) | 16Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz | 54 broches TSOPII/ 54 billes FBGA |
| M12L5121632A (2T) | 32Mbx16 | SDRAM 3.3V | 8K | 143/166/200MHz | 54 broches TSOPII/ 54 billes FBGA |
| M12L5121632A-5TG2T 200MHz TSOP II sans plomb | |||||
| M12L5121632A-6TG2T 166MHz TSOP II sans plomb | |||||
| M12L5121632A-7TG2T 143MHz TSOP II sans plomb | |||||
| M12L5121632A-5BG2T 200MHz BGA sans plomb | |||||
| M12L5121632A-6BG2T 166MHz BGA sans plomb | |||||
| M12L5121632A-7BG2T 143MHz BGA sans plomb |
M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z
128 Mo DRAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T
M13S64164A-5TG M13S64164A-5T 64 Mo DRAM DDR SDRAM IC
M13S64164A-5TG M13S64164A-5T M13S64164A(2C) Circuit intégré de mémoire DRAM DDR SDRAM ESMT
M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3.3V CI de mémoire
| Image | partie # | Description | |
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M16U4G16256A-KJBG2Z M16U4G16256A-QLBG2Z |
4Gb 256Mbx16 1.2V 1333/1600MHz DDR4 SDRAM M16U4G16256A M16U4G8512A 96BGA IC
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128 Mo DRAM DDR SDRAM M13S128168A-5TG M13S128168A-6T M13S128168A-4T |
M13S128168A (2S) 8Mbx16 2.5V 4K 160/200/250MHz 66TSOPII/ 60BGA DDR SDRAM IC
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M13S64164A-5TG M13S64164A-5T 64 Mo DRAM DDR SDRAM IC |
M13S64164A(2C) 64Mb 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz 66TSOPII IC
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M13S64164A-5TG M13S64164A-5T M13S64164A(2C) Circuit intégré de mémoire DRAM DDR SDRAM ESMT |
ESMT DRAM DDR SDRAM Memory IC M13S64164A(2C) 4Mbx16 DDR SDRAM 2.5V 4K 166/200/250MHz
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M12L2561616A-6TG2T M12L2561616A-6BIG2S ESMT SDRAM 3.3V CI de mémoire |
M12L2561616A (2T) M12L16161A (2R) M12L16164A M12L64322A M12L128168A M12L5121632ASDRAM
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